Extremely low excess noise in InAs electron avalanche photodiodes

Marshall, A., Tan, C.H, Steer, M. et al. (1 more author) (2009) Extremely low excess noise in InAs electron avalanche photodiodes. IEEE Photonics Technology Letters, 21 (13). pp. 866-868. ISSN 1041-1135



  • Marshall, A.
  • Tan, C.H
  • Steer, M.
  • David, J.P.R
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Keywords: Avalanche photodiodes (APDs); impact ionization
  • Published: 1 July 2009
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Depositing User: Miss Anthea Tucker
Date Deposited: 03 Aug 2009 14:18
Last Modified: 06 Jun 2014 09:15
Published Version: http://dx.doi.org/10.1109/LPT.2009.2019625
Status: Published
Publisher: Institute of Electrical and Electronics Engineers
Refereed: Yes
Identification Number: https://doi.org/10.1109/LPT.2009.2019625