Theory and design of quantum cascade lasers in (111) n-type Si/SiGe

Although most work towards the realization of group IV quantum cascade lasers (QCLs) has focused on valence band transitions, there are many desirable properties associated with the conduction band. We show that the commonly cited shortcomings of n-type Si/SiGe heterostructures can be overcome by moving to the (111) growth direction. Specifically, a large band offset and low effective mass are achievable and subband degeneracy is preserved. We predict net gain up to lattice temperatures of 90 K in a bound-to-continuum QCL with a double-metal waveguide, and show that a Ge interdiffusion length of at least 8 Å across interfaces is tolerable.