Direct Bandgap Group IV Epitaxy on Si for Laser Applications

Von Den Driesch, N, Stange, D, Wirths, S et al. (8 more authors) (2015) Direct Bandgap Group IV Epitaxy on Si for Laser Applications. Chemistry of Materials, 27 (13). 4693 - 4702. ISSN 0897-4756

Abstract

Metadata

Authors/Creators:
  • Von Den Driesch, N
  • Stange, D
  • Wirths, S
  • Mussler, G
  • Holländer, B
  • Ikonic, Z
  • Hartmann, JM
  • Stoica, T
  • Mantl, S
  • Grützmacher, D
  • Buca, D
Copyright, Publisher and Additional Information: © 2015, American Chemical Society. This document is the Accepted Manuscript version of a Published Work that appeared in final form in Chemistry of Materials, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see DOI10.1021/acs.chemmater.5b01327
Dates:
  • Published: 19 June 2015
  • Accepted: 10 April 2015
Institution: The University of Leeds
Academic Units: The University of Leeds > Faculty of Engineering & Physical Sciences (Leeds) > School of Electronic & Electrical Engineering (Leeds) > Pollard Institute (Leeds)
Depositing User: Symplectic Publications
Date Deposited: 03 Sep 2015 14:03
Last Modified: 23 Jun 2016 02:08
Published Version: http://dx.doi.org/10.1021/acs.chemmater.5b01327
Status: Published
Publisher: American Chemical Society
Identification Number: https://doi.org/10.1021/acs.chemmater.5b01327
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