Excess noise measurement in In0.53Ga0.47As

Goh, Y.L., Ng, J.S., Tan, C.H. et al. (2 more authors) (2005) Excess noise measurement in In0.53Ga0.47As. IEEE Photonics Technology Letters, 17 (11). pp. 2412-2414. ISSN 1041-1135



  • Goh, Y.L.
  • Ng, J.S.
  • Tan, C.H.
  • Ng, W.K.
  • David, J.P.R.
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Keywords: multiplication, Avalanche photodiodes, excess noise factor, impact ionization, ionization coefficients
  • Published: November 2005
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Depositing User: Sherpa Assistant
Date Deposited: 16 Dec 2005
Last Modified: 06 Jun 2014 09:15
Published Version: http://dx.doi.org/10.1109/LPT.2005.857239
Status: Published
Refereed: Yes
Identification Number: https://doi.org/10.1109/LPT.2005.857239