Temperature-dependent modulated reflectance of InAs/InGaAs/GaAs quantum dots-in-a-well infrared photodetectors
Nedzinskas, R, Cechavicius, B, Rimkus, A et al. (5 more authors)
(2015)
Temperature-dependent modulated reflectance of InAs/InGaAs/GaAs quantum dots-in-a-well infrared photodetectors.
Journal of Applied Physics, 117.
144304.
ISSN 0021-8979
Abstract
We present a photoreflectance (PR) study of multi-layer InAs quantum dot (QD) photodetector structures, incorporating InGaAs overgrown layers and positioned asymmetrically within GaAs/AlAs quantum wells (QWs). The influence of the back-surface reflections on the QD PR spectra is explained and a temperature-dependent photomodulation mechanism is discussed. The optical interband transitions originating from the QD/QW ground- and excited-states are revealed and their temperature behaviour in the range of 3–300 K is established. In particular, we estimated the activation energy (∼320 meV) of exciton thermal escape from QD to QW bound-states at high temperatures. Furthermore, from the obtained Varshni parameters, a strain-driven partial decomposition of the InGaAs cap layer is determined.
Metadata
Authors/Creators:
Nedzinskas, R
Cechavicius, B
Rimkus, A
Pozingyte, E
Kavaliauskas, J
Valusis, G
Li, L
Linfield, EH
Copyright, Publisher and Additional Information:
(c) 2015, American Institute of Physics Publishing LLC. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in J. Appl. Phys. 117, 144304 (2015) and may be found at http://dx.doi.org/10.1063/1.4917204
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