Epitaxy and photoluminescence studies of high quality GeSn heterostructures with Sn concentrations up to 13 at.%

Wirths, S, Geiger, R, Ikonic, Z et al. (7 more authors) (2014) Epitaxy and photoluminescence studies of high quality GeSn heterostructures with Sn concentrations up to 13 at.%. In: IEEE International Conference on Group IV Photonics GFP. 2014 IEEE 11th International Conference on Group IV Photonics (GFP), 27-29 Aug 2014, Paris, France. IEEE Computer Society , 15 - 16. ISBN 9781479922833

Abstract

Metadata

Authors/Creators:
  • Wirths, S
  • Geiger, R
  • Ikonic, Z
  • Tiedemann, AT
  • Mussler, G
  • Hartmann, J-M
  • Mantl, S
  • Sigg, H
  • Grützmacher, D
  • Buca, D
Copyright, Publisher and Additional Information: (c) 2014 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works
Keywords: Chemical Vapor Deposition; Germanium-Tin; Group IV alloys; Laser materials; low temperature epitaxy; Photoluminescence; Si photonics
Dates:
  • Published: 18 November 2014
Institution: The University of Leeds
Academic Units: The University of Leeds > Faculty of Engineering & Physical Sciences (Leeds) > School of Electronic & Electrical Engineering (Leeds) > Pollard Institute (Leeds)
Depositing User: Symplectic Publications
Date Deposited: 23 Mar 2015 14:32
Last Modified: 03 Feb 2018 17:47
Published Version: http://dx.doi.org/10.1109/Group4.2014.6962005
Status: Published
Publisher: IEEE Computer Society
Identification Number: https://doi.org/10.1109/Group4.2014.6962005

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