High- k gate stacks on low bandgap tensile strained Ge and GeSn alloys for field-effect transistors

Wirths, S, Stange, D, Pampillón, M-A et al. (11 more authors) (2015) High- k gate stacks on low bandgap tensile strained Ge and GeSn alloys for field-effect transistors. ACS Applied Materials and Interfaces, 7 (1). 62 - 67. ISSN 1944-8252

Abstract

Metadata

Authors/Creators:
  • Wirths, S
  • Stange, D
  • Pampillón, M-A
  • Tiedemann, AT
  • Mussler, G
  • Fox, A
  • Breuer, U
  • Baert, B
  • San Andrés, E
  • Nguyen, ND
  • Hartmann, J-M
  • Ikonic, Z
  • Mantl, S
  • Buca, D
Keywords: strained Ge; GeSn; high- k dielectrics; low bandgap alloys; field effect transistor
Dates:
  • Published: 14 January 2015
Institution: The University of Leeds
Academic Units: The University of Leeds > Faculty of Engineering & Physical Sciences (Leeds) > School of Electronic & Electrical Engineering (Leeds) > Pollard Institute (Leeds)
Depositing User: Symplectic Publications
Date Deposited: 17 Mar 2015 09:52
Last Modified: 08 Nov 2016 19:13
Published Version: http://dx.doi.org/10.1021/am5075248
Status: Published
Publisher: American Chemical Society
Identification Number: https://doi.org/10.1021/am5075248
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