Electronic structure of interface defects in epitaxially grown germanium on silicon

Rafferty, HM, Burnett, AD, Ikonic, Z et al. (1 more author) (2013) Electronic structure of interface defects in epitaxially grown germanium on silicon. In: 16th International Workshop on Computational Electronics, 4-7 June 2013, Nara, Japan.

Abstract

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Authors/Creators:
  • Rafferty, HM
  • Burnett, AD
  • Ikonic, Z
  • Kelsall, RW
Dates:
  • Published: 2013
Institution: The University of Leeds
Academic Units: The University of Leeds > Faculty of Engineering & Physical Sciences (Leeds) > School of Electronic & Electrical Engineering (Leeds) > Pollard Institute (Leeds)
The University of Leeds > Faculty of Engineering & Physical Sciences (Leeds) > School of Chemistry (Leeds) > Physical Chemistry (Leeds)
Depositing User: Symplectic Publications
Date Deposited: 11 Sep 2014 11:15
Last Modified: 08 Aug 2015 07:38
Published Version: http://www.iwce.org/index.php?id=552&webgrab_path=...
Status: Published

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