Hole conductivity in oxygen-excess BaTi(1-x)CaxO(3-x+d)

Abstract

BaTiO3 containing Ca substituted for Ti as an acceptor dopant, with oxygen vacancies for charge compensation and processed in air, is a p-type semiconductor. The hole conductivity is attributed to uptake of a small amount of oxygen which ionises by means of electron transfer from lattice oxide ions, generating O� ions as the source of p-type semiconductivity. Samples heated in high pressure O2, up to 80 atm, absorb up to twice the amount expected from the oxygen vacancy concentration. This is attributed to incorporation of superoxide, O2 �, ions in oxygen vacancies associated with the Ca2+ dopant and is supported by Raman spectroscopy results.

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Authors/Creators:	Ren, P. Maso, N. West, A.R.
Copyright, Publisher and Additional Information:	© 2013 The Author(s). This is an Open Access article distributed under the terms of the Creative Commons Attribution Licence (http://creativecommons.org/licenses/by/3.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
Dates:	Published: 8 November 2013
Institution:	The University of Sheffield
Academic Units:	The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Materials Science and Engineering (Sheffield)
Depositing User:	Symplectic Sheffield
Date Deposited:	20 Jun 2014 13:38
Last Modified:	20 Jun 2014 13:38
Published Version:	http://dx.doi.org/10.1039/c3cp52475b
Status:	Published
Publisher:	RSC Publishing
Refereed:	Yes
Identification Number:	https://doi.org/10.1039/c3cp52475b

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Hole conductivity in oxygen-excess BaTi(1-x)CaxO(3-x+d)

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