Low-frequency noise properties of beryllium δ-doped GaAs/AlAs quantum wells near the Mott transition

Palenskis, V, Matukas, J, Pralgauskaite, S et al. (6 more authors) (2013) Low-frequency noise properties of beryllium δ-doped GaAs/AlAs quantum wells near the Mott transition. Journal of Applied Physics, 113 (8). 083707. ISSN 0021-8979

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Authors/Creators:
  • Palenskis, V
  • Matukas, J
  • Pralgauskaite, S
  • Seliuta, D
  • Kašalynas, I
  • Subačius, L
  • Valušis, G
  • Khanna, SP
  • Linfield, EH
Copyright, Publisher and Additional Information: (c) 2013, American Institute of Physics. Reproduced in accordance with the publisher's self-archiving policy.
Dates:
  • Published: 28 February 2013
Institution: The University of Leeds
Academic Units: The University of Leeds > Faculty of Engineering & Physical Sciences (Leeds) > School of Electronic & Electrical Engineering (Leeds) > Pollard Institute (Leeds)
Depositing User: Symplectic Publications
Date Deposited: 22 May 2014 10:59
Last Modified: 22 Jan 2018 09:52
Published Version: http://dx.doi.org/10.1063/1.4792741
Status: Published
Publisher: American Institute of Physics
Identification Number: https://doi.org/10.1063/1.4792741
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