Influence of absorber layer dopants on performance of Ge/Si single photon avalanche diodes

Pilgrim, NJ, Ikonic, Z and Kelsall, RW (2013) Influence of absorber layer dopants on performance of Ge/Si single photon avalanche diodes. Journal of Applied Physics, 113 (14). 144508. ISSN 0021-8979

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Authors/Creators:
  • Pilgrim, NJ
  • Ikonic, Z
  • Kelsall, RW
Copyright, Publisher and Additional Information: (c) 2013, American Institute of Physics. This is an author produced version of a paper published in the Journal of Applied Physics. Uploaded in accordance with the publisher's self-archiving policy.
Keywords: Germanium; Doping; Electric fields; Tunneling; Elemental semiconductors; Semiconductor insulator semiconductor structures; Photodiodes; Electron transfer; Energy transfer; Monte Carlo methods
Dates:
  • Published: 14 April 2013
Institution: The University of Leeds
Academic Units: The University of Leeds > Faculty of Engineering & Physical Sciences (Leeds) > School of Electronic & Electrical Engineering (Leeds) > Pollard Institute (Leeds)
Depositing User: Symplectic Publications
Date Deposited: 19 Mar 2014 11:32
Last Modified: 29 Mar 2018 12:47
Published Version: http://dx.doi.org/10.1063/1.4798582
Status: Published
Publisher: American Institute of Physics
Identification Number: https://doi.org/10.1063/1.4798582
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