Band engineering and growth of tensile strained Ge/(Si)GeSn heterostructures for tunnel field effect transistors

Wirths, S, Tiedemann, AT, Ikonic, Z et al. (9 more authors) (2013) Band engineering and growth of tensile strained Ge/(Si)GeSn heterostructures for tunnel field effect transistors. Applied Physics Letters, 102 (19). 192103. ISSN 0003-6951

Abstract

Metadata

Authors/Creators:
  • Wirths, S
  • Tiedemann, AT
  • Ikonic, Z
  • Harrison, P
  • Holländer, B
  • Stoica, T
  • Mussler, G
  • Myronov, M
  • Hartmann, JM
  • Grützmacher, D
  • Buca, D
  • Mantl, S
Copyright, Publisher and Additional Information: (c) 2013, American Institute of Physics. This is an author produced version of a paper published in Applied Physics Letters. Uploaded in accordance with the publisher's self-archiving policy.
Keywords: Germanium; Elemental semiconductors; Band gap; Epitaxy; Tunneling; Semiconductor growth; Heterojunctions; Field effect transistors; Semiconductors; Stress relaxation
Dates:
  • Published: 13 May 2013
Institution: The University of Leeds
Academic Units: The University of Leeds > Faculty of Engineering & Physical Sciences (Leeds) > School of Electronic & Electrical Engineering (Leeds) > Pollard Institute (Leeds)
Depositing User: Symplectic Publications
Date Deposited: 19 Mar 2014 11:21
Last Modified: 29 Mar 2018 12:47
Published Version: http://dx.doi.org/10.1063/1.4805034
Status: Published
Publisher: American Institute of Physics
Identification Number: https://doi.org/10.1063/1.4805034
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