Zhang, Y. orcid.org/0000-0002-2196-7291, Velichko, A.V., Fonseka, H.A. orcid.org/0000-0003-3410-6981 et al. (7 more authors) (2021) Defect-free axially stacked GaAs/GaAsP nanowire quantum dots with strong carrier confinement. Nano Letters, 21 (13). pp. 5722-5729. ISSN 1530-6984
Abstract
Axially stacked quantum dots (QDs) in nanowires (NWs) have important applications in nanoscale quantum devices and lasers. However, there is lack of study of defect-free growth and structure optimization using the Au-free growth mode. We report a detailed study of self-catalyzed GaAsP NWs containing defect-free axial GaAs QDs (NWQDs). Sharp interfaces (1.8-3.6 nm) allow closely stack QDs with very similar structural properties. High structural quality is maintained when up to 50 GaAs QDs are placed in a single NW. The QDs maintain an emission line width of <10 meV at 140 K (comparable to the best III-V QDs, including nitrides) after having been stored in an ambient atmosphere for over 6 months and exhibit deep carrier confinement (90 meV) and the largest reported exciton-biexciton splitting (11 meV) for non-nitride III-V NWQDs. Our study provides a solid foundation to build high-performance axially stacked NWQD devices that are compatible with CMOS technologies.
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Copyright, Publisher and Additional Information: | © 2021 The Authors. Published by American Chemical Society. This is an Open Access article distributed under the terms of the Creative Commons Attribution Licence (https://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. | ||||||||
Keywords: | axially stacked quantum dots; carrier confinement; defect-free crystal; exciton−biexciton splitting; long-term stability; nanowire | ||||||||
Dates: |
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Institution: | The University of Sheffield | ||||||||
Academic Units: | The University of Sheffield > Faculty of Science (Sheffield) > Department of Physics and Astronomy (Sheffield) | ||||||||
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Depositing User: | Symplectic Sheffield | ||||||||
Date Deposited: | 27 Apr 2023 15:24 | ||||||||
Last Modified: | 27 Apr 2023 15:24 | ||||||||
Published Version: | http://dx.doi.org/10.1021/acs.nanolett.1c01461 | ||||||||
Status: | Published | ||||||||
Publisher: | American Chemical Society (ACS) | ||||||||
Refereed: | Yes | ||||||||
Identification Number: | https://doi.org/10.1021/acs.nanolett.1c01461 | ||||||||
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