Feng, P., Xu, C., Bai, J. et al. (4 more authors) (2022) A simple approach to achieving ultrasmall III-nitride microlight-emitting diodes with red emission. ACS Applied Electronic Materials, 4 (6). pp. 2581-3165. ISSN 2637-6113
Abstract
The microdisplays for augmented reality and virtual reality require ultrasmall micro light-emitting-diodes (μLEDs) with a dimension of ≤5 μm. Furthermore, the microdisplays also need three kinds of such μLEDs each emitting red, green, and blue emission. Currently, in addition to a great challenge for achieving ultrasmall μLEDs mainly based on III-nitride semiconductors, another fundamental barrier is due to an extreme difficulty in growing III-nitride-based red LEDs. So far, there has not been any effective approach to obtain high indium content InGaN as an active region required for a red LED while maintaining high optical performance. In this paper, we have demonstrated a selective epitaxy growth approach using a template featuring microhole arrays. This allows us to not only obtain the natural formation of ultrasmall μLEDs but also achieve InGaN with enhanced indium content at an elevated growth temperature, at which it is impossible to obtain InGaN-based red LEDs on a standard planar surface. By means of this approach, we have demonstrated red μLEDs (at an emission wavelength of 642 nm) with a dimension of 2 μm, exhibiting a high luminance of 3.5 × 107 cd/m2 and a peak external quantum efficiency of 1.75% measured in a wafer form (i.e., without any packaging to enhance an extraction efficiency). In contrast, an LED grown under identical growth conditions but on a standard planar surface shows green emission at 538 nm. This highlights that our approach provides a simple solution that can address the two major challenges mentioned above.
Metadata
Item Type: | Article |
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Authors/Creators: |
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Copyright, Publisher and Additional Information: | © 2022 The Authors. Published by American Chemical Society. This is an Open Access article distributed under the terms of the Creative Commons Attribution Licence (http://creativecommons.org/licenses/by/4.0), |
Keywords: | InGaN; microLED; selective epitaxy growth; patterned template; MOVPE; EQE |
Dates: |
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Institution: | The University of Sheffield |
Academic Units: | The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield) |
Funding Information: | Funder Grant number ENGINEERING AND PHYSICAL SCIENCE RESEARCH COUNCIL EP/M015181/1 ENGINEERING AND PHYSICAL SCIENCE RESEARCH COUNCIL EP/T013001/1 ENGINEERING AND PHYSICAL SCIENCE RESEARCH COUNCIL EP/W003244/1 |
Depositing User: | Symplectic Sheffield |
Date Deposited: | 20 May 2022 17:24 |
Last Modified: | 08 Dec 2022 01:45 |
Status: | Published |
Publisher: | American Chemical Society (ACS) |
Refereed: | Yes |
Identification Number: | 10.1021/acsaelm.2c00311 |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:187180 |