A GaAsSb/AlGaAsSb avalanche photodiode with a very small temperature coefficient of breakdown voltage

Cao, Y. orcid.org/0000-0002-6353-7660, Osman, T., Clarke, E. orcid.org/0000-0002-8287-0282 et al. (3 more authors) (2022) A GaAsSb/AlGaAsSb avalanche photodiode with a very small temperature coefficient of breakdown voltage. Journal of Lightwave Technology, 40 (14). pp. 4709-4713. ISSN 0733-8724

Abstract

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Authors/Creators:
Copyright, Publisher and Additional Information: © 2022 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works. Reproduced in accordance with the publisher's self-archiving policy.
Keywords: Avalanche photodiode (APD); avalanche breakdown; AlGaAsSb; GaAsSb; impact ionization; Separate Absorption and Multiplication Avalanche Photodiode (SAM-APD); temperature coefficient
Dates:
  • Published (online): 13 April 2022
  • Published: 15 July 2022
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Funding Information:
FunderGrant number
ENGINEERING AND PHYSICAL SCIENCE RESEARCH COUNCILEP/K001469/1
ENGINEERING AND PHYSICAL SCIENCE RESEARCH COUNCILEP/N020715/1
Depositing User: Symplectic Sheffield
Date Deposited: 20 Apr 2022 13:24
Last Modified: 27 Jan 2023 16:28
Status: Published
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Refereed: Yes
Identification Number: https://doi.org/10.1109/jlt.2022.3167268
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