A GaAsSb/AlGaAsSb avalanche photodiode with a very small temperature coefficient of breakdown voltage

Abstract

Avalanche photodiodes (APDs) made with the material AlGaAsSb (lattice-matched to InP) exhibit very low excess noise characteristics. We demonstrate a Separate Absorption and Multiplication APD (SAM-APD) incorporating a GaAs0.52Sb0.48 (GaAsSb) absorption region and an Al0.85Ga0.15As0.56Sb0.44 (AlGaAsSb) avalanche region. Our GaAsSb/AlGaAsSb SAM-APD exhibits a cut-off wavelength of 1.70 m at room temperature and a responsivity of 0.39 A/W at 1.55 m wavelength (with no antireflection coating). Temperature dependence of the breakdown voltage was obtained from avalanche gain data from multiple devices operated at 77 to 295 K. This produced a temperature coefficient of breakdown voltage of 4.310.33 mV/K, a factor of 10 and 5 smaller than values for comparable InP and InAlAs SAM-APDs. The very small temperature coefficient of this work is consistent with the extremely weak temperature dependence of avalanche breakdown previously observed in AlGaAsSb diodes.

Metadata

Authors/Creators:

Cao, Y. https://orcid.org/0000-0002-6353-7660
Osman, T.
Clarke, E. https://orcid.org/0000-0002-8287-0282
Patil, P.K.
Ng, J.S. https://orcid.org/0000-0002-1064-0410
Tan, C.H.

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Keywords:

Avalanche photodiode (APD); avalanche breakdown; AlGaAsSb; GaAsSb; impact ionization; Separate Absorption and Multiplication Avalanche Photodiode (SAM-APD); temperature coefficient

Dates: