Ovenden, C., Farrer, I. orcid.org/0000-0002-3033-4306, Skolnick, M.S. et al. (1 more author) (2022) Nanoscale wafer patterning using SPM induced local anodic oxidation in InP substrates. Semiconductor Science and Technology, 37 (2). 025001. ISSN 0268-1242
Abstract
Atomic force microscopy (AFM) assisted local anodic oxidation (LAO) offers advantages over other semiconductor fabrication techniques as it is a low contamination method. We demonstrate the fabrication of deep and highly reproducible nanohole arrays on InP using LAO. Nanohole and nano-oxide mound radius and depth are controlled independently by altering AFM tip bias and humidity, with a maximum nanohole depth of 15.6 ± 1.2 nm being achieved. Additionally, the effect of tip write speed on oxide line formation is compared for n-type, p-type and semi-insulating substrates, which shows that n-type InP oxidizes at a slower rate that semi-insulated or p-type InP. Finally, we calculate the activation energy for LAO of semi-insulating InP to be 0.4 eV, suggesting the oxidation mechanism is similar to that which occurs during plasma oxidation.
Metadata
Item Type: | Article |
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Authors/Creators: |
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Copyright, Publisher and Additional Information: | © 2021 The Author(s). Original content from this work may be used under the terms of the Creative Commons Attribution 4.0 license (http://creativecommons.org/licenses/by/4.0/). Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI. |
Keywords: | nanolithography; atomic force microscopy; semiconductor fabrication |
Dates: |
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Institution: | The University of Sheffield |
Academic Units: | The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield) |
Depositing User: | Symplectic Sheffield |
Date Deposited: | 11 Jan 2022 09:19 |
Last Modified: | 11 Jan 2022 09:19 |
Status: | Published |
Publisher: | IOP Publishing |
Refereed: | Yes |
Identification Number: | 10.1088/1361-6641/ac3f20 |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:182271 |
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