Droplet epitaxy of InAs/InP quantum dots via MOVPE by using an InGaAs interlayer

Sala, D.E.M., Godsland, M., Na, Y.I. et al. (2 more authors) (2021) Droplet epitaxy of InAs/InP quantum dots via MOVPE by using an InGaAs interlayer. Nanotechnology, 33 (6). 065601. ISSN 0957-4484

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Copyright, Publisher and Additional Information: © 2021 IOP Publishing Ltd. Original content from this work may be used under the terms of the Creative Commons Attribution 4.0 licence (http://creativecommons.org/licenses/by/4.0). Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI.
Keywords: AFM; III-V quantum dots; MOVPE; TEM; droplet epitaxy; photoluminescence
Dates:
  • Accepted: 3 November 2021
  • Published (online): 19 November 2021
  • Published: 19 November 2021
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Depositing User: Symplectic Sheffield
Date Deposited: 29 Nov 2021 12:22
Last Modified: 29 Nov 2021 12:22
Status: Published
Publisher: IOP Publishing
Refereed: Yes
Identification Number: https://doi.org/10.1088/1361-6528/ac3617
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