Low excess noise of Al0.85Ga0.15As0.56Sb0.44 avalanche photodiode from pure electron injection

Taylor-Mew, J., Shulyak, V., White, B. et al. (2 more authors) (2021) Low excess noise of Al0.85Ga0.15As0.56Sb0.44 avalanche photodiode from pure electron injection. IEEE Photonics Technology Letters, 33 (20). pp. 1155-1158. ISSN 1041-1135

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Keywords: Avalanche photodiodes; impact ionization; excess noise
Dates:
  • Accepted: 30 August 2021
  • Published (online): 3 September 2021
  • Published: 15 October 2021
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Funding Information:
FunderGrant number
PHLUX TECHNOLOGY LTDUNSPECIFIED
Depositing User: Symplectic Sheffield
Date Deposited: 17 Sep 2021 09:09
Last Modified: 03 Sep 2022 00:13
Status: Published
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Refereed: Yes
Identification Number: https://doi.org/10.1109/lpt.2021.3110123
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