Thermoelectric Efficiency of Epitaxial GeSn Alloys for Integrated Si-Based Applications: Assessing the Lattice Thermal Conductivity by Raman Thermometry

Spirito, D, von den Driesch, N, Manganelli, CL et al. (7 more authors) (2021) Thermoelectric Efficiency of Epitaxial GeSn Alloys for Integrated Si-Based Applications: Assessing the Lattice Thermal Conductivity by Raman Thermometry. ACS Applied Energy Materials. ISSN 2574-0962

Abstract

Metadata

Authors/Creators:
  • Spirito, D
  • von den Driesch, N
  • Manganelli, CL
  • Zoellner, MH
  • Corley-Wiciak, AA
  • Ikonic, Z
  • Stoica, T
  • Grützmacher, D
  • Buca, D
  • Capellini, G
Copyright, Publisher and Additional Information: © 2021 American Chemical Society. This is an author produced version of an article published in ACS Applied Energy Materials. Uploaded in accordance with the publisher's self-archiving policy.
Keywords: GeSn; Raman thermometry; thermoelectrics; heat conduction; thermal conductivity; energy harvesting
Dates:
  • Accepted: 28 June 2021
  • Published (online): 7 July 2021
Institution: The University of Leeds
Academic Units: The University of Leeds > Faculty of Engineering & Physical Sciences (Leeds) > School of Electronic & Electrical Engineering (Leeds) > Pollard Institute (Leeds)
Depositing User: Symplectic Publications
Date Deposited: 12 Jul 2021 11:12
Last Modified: 12 Jul 2021 11:12
Status: Published online
Publisher: American Chemical Society (ACS)
Identification Number: https://doi.org/10.1021/acsaem.1c01576

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