Direct epitaxial approach to achieve a monolithic on-chip integration of a HEMT and a single micro-LED with a high-modulation bandwidth

Cai, Y. orcid.org/0000-0002-2004-0881, Haggar, J.I.H., Zhu, C. et al. (3 more authors) (2021) Direct epitaxial approach to achieve a monolithic on-chip integration of a HEMT and a single micro-LED with a high-modulation bandwidth. ACS Applied Electronic Materials, 3 (1). pp. 445-450. ISSN 2637-6113

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Authors/Creators:
Copyright, Publisher and Additional Information: © 2021 The Authors. Published by American Chemical Society. This is an open access article published under a Creative Commons Attribution (CC-BY) License, which permits unrestricted use, distribution and reproduction in any medium, provided the author and source are cited. (http://pubs.acs.org/page/policy/authorchoice_ccby_termsofuse.html)
Keywords: MicroLEDs; modulation bandwidth; GaN; selective overgrowth; HEMTs; VLC
Dates:
  • Accepted: 4 January 2021
  • Published (online): 14 January 2021
  • Published: 26 January 2021
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Funding Information:
FunderGrant number
ENGINEERING AND PHYSICAL SCIENCE RESEARCH COUNCILEP/M015181/1
ENGINEERING AND PHYSICAL SCIENCE RESEARCH COUNCILEP/P006973/1
ENGINEERING AND PHYSICAL SCIENCE RESEARCH COUNCILEP/T013001/1
ENGINEERING AND PHYSICAL SCIENCE RESEARCH COUNCILEP/P006361/1
Depositing User: Symplectic Sheffield
Date Deposited: 11 Feb 2021 16:45
Last Modified: 11 Feb 2021 20:02
Status: Published online
Publisher: American Chemical Society (ACS)
Refereed: Yes
Identification Number: https://doi.org/10.1021/acsaelm.0c00985

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