High modulation bandwidth of semipolar (11–22) InGaN/GaN LEDs with long wavelength emission

Haggar, J.I.H., Cai, Y. orcid.org/0000-0002-2004-0881, Ghataora, S.S. et al. (3 more authors) (2020) High modulation bandwidth of semipolar (11–22) InGaN/GaN LEDs with long wavelength emission. ACS Applied Electronic Materials, 2 (8). pp. 2363-2368. ISSN 2637-6113

Abstract

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Authors/Creators:
Copyright, Publisher and Additional Information: Copyright © 2020 American Chemical Society. This is an open access article published under a Creative Commons Attribution (CC-BY) License (https://pubs.acs.org/page/policy/authorchoice_ccby_termsofuse.html), which permits unrestricted use, distribution and reproduction in any medium, provided the author and source are cited.
Keywords: Semipolar LEDs; Modulation bandwidth; InGaN; Recombination lifetime; VLC
Dates:
  • Accepted: 16 July 2020
  • Published (online): 16 July 2020
  • Published: 25 August 2020
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Funding Information:
FunderGrant number
ENGINEERING AND PHYSICAL SCIENCE RESEARCH COUNCILEP/M015181/1
ENGINEERING AND PHYSICAL SCIENCE RESEARCH COUNCILEP/P006361/1
ENGINEERING AND PHYSICAL SCIENCE RESEARCH COUNCILEP/P006973/1
Depositing User: Symplectic Sheffield
Date Deposited: 13 Oct 2020 11:11
Last Modified: 13 Oct 2020 11:11
Status: Published
Publisher: American Chemical Society (ACS)
Refereed: Yes
Identification Number: https://doi.org/10.1021/acsaelm.0c00399
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