Multilevel Resistance Switching and Enhanced Spin Transition Temperature in Single and Double Molecule Spin Crossover Nanogap Devices

Gee, A, Jaafar, AH, Brachnakova, B et al. (4 more authors) (2020) Multilevel Resistance Switching and Enhanced Spin Transition Temperature in Single and Double Molecule Spin Crossover Nanogap Devices. The Journal of Physical Chemistry C. ISSN 1932-7447

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Copyright, Publisher and Additional Information: © 2020 American Chemical Society. This is an author produced version of a journal article published in The Journal of Physical Chemistry C. Uploaded in accordance with the publisher's self-archiving policy.
Dates:
  • Accepted: 30 May 2020
  • Published (online): 30 May 2020
Institution: The University of Leeds
Academic Units: The University of Leeds > Faculty of Engineering & Physical Sciences (Leeds) > School of Physics and Astronomy (Leeds) > Condensed Matter (Leeds)
Funding Information:
FunderGrant number
EPSRC (Engineering and Physical Sciences Research Council)EP/M000923/1
Depositing User: Symplectic Publications
Date Deposited: 02 Jun 2020 11:36
Last Modified: 30 May 2021 00:39
Status: Published online
Publisher: American Chemical Society
Identification Number: https://doi.org/10.1021/acs.jpcc.0c03824

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