Non-polar (11-20) GaN metal-semiconductor-metal photo-detectors with superior performance on silicon

Cai, Y., Shen, S., Zhu, C. et al. (3 more authors) (2020) Non-polar (11-20) GaN metal-semiconductor-metal photo-detectors with superior performance on silicon. ACS Applied Materials & Interfaces, 12 (22). pp. 25031-25036. ISSN 1944-8244

Abstract

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Authors/Creators:
Copyright, Publisher and Additional Information: © 2020 American Chemical Society. This is an open access article published under a Creative Commons Attribution (CC-BY) License, (http://pubs.acs.org/page/policy/authorchoice_ccby_termsofuse.html) which permits unrestricted use, distribution and reproduction in any medium, provided the author and source are cited.
Keywords: nonpolar GaN; photodetector; responsivity; response time; ultraviolet; silicon substrates
Dates:
  • Accepted: 6 May 2020
  • Published (online): 6 May 2020
  • Published: 3 June 2020
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Funding Information:
FunderGrant number
ENGINEERING AND PHYSICAL SCIENCE RESEARCH COUNCILEP/M015181/1
ENGINEERING AND PHYSICAL SCIENCE RESEARCH COUNCILEP/P006361/1
ENGINEERING AND PHYSICAL SCIENCE RESEARCH COUNCILEP/P006973/1
Depositing User: Symplectic Sheffield
Date Deposited: 15 May 2020 13:48
Last Modified: 19 Nov 2021 11:53
Status: Published
Publisher: American Chemical Society (ACS)
Refereed: Yes
Identification Number: https://doi.org/10.1021/acsami.0c04890
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