Exploring an approach toward the intrinsic limits of GaN electronics

Jiang, S., Cai, Y., Feng, P. et al. (6 more authors) (2020) Exploring an approach toward the intrinsic limits of GaN electronics. ACS Applied Materials & Interfaces, 12 (11). pp. 12949-12954. ISSN 1944-8244



Copyright, Publisher and Additional Information: © 2020 American Chemical Society. This is an open access article published under a Creative Commons Attribution (CC-BY) License, (https://pubs.acs.org/page/policy/authorchoice_ccby_termsofuse.html) which permits unrestricted use, distribution and reproduction in any medium, provided the author and source are cited.
Keywords: GaN; breakdown voltage; critical electric field; HEMTs; leakage current; 2DEG; electronics; MOVPE growth
  • Accepted: 24 February 2020
  • Published (online): 24 February 2020
  • Published: 18 March 2020
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Funding Information:
FunderGrant number
Engineering and Physical Science Research CouncilEP/M015181/1; EP/P006973/1
Depositing User: Symplectic Sheffield
Date Deposited: 04 Mar 2020 10:36
Last Modified: 03 Dec 2021 14:41
Status: Published
Publisher: American Chemical Society (ACS)
Refereed: Yes
Identification Number: https://doi.org/10.1021/acsami.9b19697
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