A direct epitaxial approach to achieving ultrasmall and ultrabright InGaN micro light-emitting diodes (μLEDs)

Bai, J., Cai, Y., Feng, P. et al. (4 more authors) (2020) A direct epitaxial approach to achieving ultrasmall and ultrabright InGaN micro light-emitting diodes (μLEDs). ACS Photonics, 7 (2). pp. 411-415. ISSN 2330-4022

Abstract

Metadata

Authors/Creators:
Copyright, Publisher and Additional Information: © 2020 American Chemical Society. This is an open access article published under a Creative Commons Attribution (http://creativecommons.org/licenses/by/4.0) License, which permits unrestricted use, distribution and reproduction in any medium, provided the author and source are cited.
Keywords: μLEDs; selective overgrowth; InGaN/GaN; external quantum efficiency; internal quantum efficiency; dry-etching
Dates:
  • Published (online): 10 January 2020
  • Published: 19 February 2020
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Funding Information:
FunderGrant number
ENGINEERING AND PHYSICAL SCIENCE RESEARCH COUNCILEP/P006361/1
ENGINEERING AND PHYSICAL SCIENCE RESEARCH COUNCILEP/P006973/1
Depositing User: Symplectic Sheffield
Date Deposited: 06 Mar 2020 16:35
Last Modified: 06 Mar 2020 16:35
Status: Published
Publisher: American Chemical Society (ACS)
Refereed: Yes
Identification Number: https://doi.org/10.1021/acsphotonics.9b01351

Share / Export

Statistics