Modeling temperature dependent avalanche characteristics of InP

Avalanche photodiodes (APDs), and single photon avalanche diodes (SPADs), with InP avalanche regions and InGaAs absorption regions, are used for detecting weak infrared light at ~ 1.55 μm wavelength. These devices are often cooled to below room temperature during operation yet both validated simulation models and impact ionization coefficients that accurately describe the avalanche characteristics of InP are lacking in the temperature range of interest (200 K to room temperature). In this paper we present an accessible, validated temperature dependent simulation model for InP APDs/SPADs. The model is capable of simulating avalanche gain, excess noise, breakdown voltage, and impulse current at 150 - 300 K. Temperature dependent ionization coefficients in InP, which may be used with other APD/SPAD simulation models, are also presented. The data reported in this paper is available from the ORDA digital repository (DOI: 10.15131/shef.data.c.4373006).