Li, Q., Zhang, Y., Wang, Z. et al. (4 more authors) (2018) Heavily tin-doped indium oxide nano-pyramids as high-performance gas sensor. AIP Advances, 8 (11). 115316. ISSN 2158-3226
Abstract
Heavily Sn-doped In2O3nano-pyramids with a Sn percentage of 19.97% by weight have been prepared by sputtering technique. The nano-pyramids with smooth facets and a sharp tip have been achieved by deposition on Sn-metal particles, leading to a diameter of ∼100nm. The gas sensors realized from these pyramids are highly sensitive to ethanol gas, and the sensitivity is about 133.99 against 200ppm ethanol at 250°C. Good sensitivity characteristics have been obtained even at a low temperature of down to 50°C. The high response and low working temperature demonstrate the potential application of heavily Sn-doped In2O3 nano-pyramids for fabricating gas sensors.
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Copyright, Publisher and Additional Information: | © 2018 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/). | ||||||
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Institution: | The University of Sheffield | ||||||
Academic Units: | The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield) | ||||||
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Depositing User: | Symplectic Sheffield | ||||||
Date Deposited: | 11 Jan 2019 10:21 | ||||||
Last Modified: | 11 Jan 2019 10:21 | ||||||
Published Version: | https://doi.org/10.1063/1.5048622 | ||||||
Status: | Published | ||||||
Publisher: | AIP Publishing | ||||||
Refereed: | Yes | ||||||
Identification Number: | https://doi.org/10.1063/1.5048622 | ||||||
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