Cascade capture of charge carriers in highly doped semiconductors

Orlova, EE orcid.org/0000-0003-0243-0074, Kelsall, RW orcid.org/0000-0003-4830-2457, Deßmann, N et al. (4 more authors) (2018) Cascade capture of charge carriers in highly doped semiconductors. Journal of Applied Physics, 124 (8). 085704. ISSN 0021-8979

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Copyright, Publisher and Additional Information: This article is protected by copyright. Published by AIP Publishing. This is an author produced version of a paper published in Journal of Applied Physics. Uploaded in accordance with the publisher's self-archiving policy.
Keywords: semiconductors, impurities, recombination
Dates:
  • Published: 28 August 2018
  • Accepted: 26 July 2018
  • Published (online): 24 August 2018
Institution: The University of Leeds
Academic Units: The University of Leeds > Faculty of Engineering & Physical Sciences (Leeds) > School of Electronic & Electrical Engineering (Leeds) > Pollard Institute (Leeds)
Depositing User: Symplectic Publications
Date Deposited: 09 Aug 2018 08:20
Last Modified: 20 Jan 2021 11:29
Status: Published
Publisher: AIP Publishing
Identification Number: https://doi.org/10.1063/1.5035301

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