Theoretical modelling of 2DHG in Oxide/GaN/AlGaN/GaN heterostructures

Kumar, A. and De Souza, M.M. (2016) Theoretical modelling of 2DHG in Oxide/GaN/AlGaN/GaN heterostructures. In: Book of abstracts UK semiconductors. UK Semiconductors 2016, 06-07 Jul 2016, Sheffield, UK. .


Copyright, Publisher and Additional Information: © UK Semiconductors 2016
  • Published: 5 July 2016
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Funding Information:
FunderGrant number
Depositing User: Symplectic Sheffield
Date Deposited: 15 Jun 2018 10:09
Last Modified: 15 Jun 2018 10:09
Status: Published
Refereed: Yes


Filename: Theoretical Modelling of 2DHG in oxide-GaN-AlGaN-GaN heterostructures.pdf

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