Rasheduzzaman, M. and De Souza, M.M. orcid.org/0000-0002-7804-7154 (2016) Evaluation of the Analytic Approach for design of deep class AB Power Amplifiers in GaN. In: Book of abstracts UK semiconductors. UK Semiconductors 2016, 06 Jul 2016 - 07 Jul 2017, Sheffield, UK . .
Abstract
Conventionally either load and source-pull measurement systems or more commonly harmonic balance (HB) simulations using large-signal models are used to obtain optimum impedance values to design a power amplifier. As an alternative to these methods, we demonstrated an analytical approach, previously described in [1-3] based on the load line theory popularized by Cripps [4]. Here, we demonstrate our method using a 25W GaN-on-SiC HEMT (CGH40025) at bias conditions ranging from deep class AB to class A .
Metadata
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Copyright, Publisher and Additional Information: | © UK Semiconductors 2016 | ||||
Dates: |
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Institution: | The University of Sheffield | ||||
Academic Units: | The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield) | ||||
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Depositing User: | Symplectic Sheffield | ||||
Date Deposited: | 15 Jun 2018 09:38 | ||||
Last Modified: | 19 Dec 2022 13:49 | ||||
Status: | Published | ||||
Refereed: | Yes |
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Filename: Evaluation of the analytic approach for design of deep class AB Power Amplifiers in GaN UK Semi 2016.pdf