Analysis of a Clustered IGBT and Silicon Carbide MOSFET Hybrid Switch

Abstract

In this paper, a parallel arrangement of a silicon MOS-gated thyristor structure and a silicon carbide Power MOSFET is proposed and experimentally demonstrated for the first time. Experimental results show that the hybrid switch exhibits low conduction losses at low current levels as well as large current-carrying capability at high current levels. In addition, compared to Clustered IGBT structure, the hybrid switch exhibits a 43% reduction in Eoff without any increase in Vce(sat) at 150°C.

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Authors/Creators:	Luo, P. Long, H.Y. Sweet, M.R. De Souza, M.M. https://orcid.org/0000-0002-7804-7154 Narayanan, E.M.S. https://orcid.org/0000-0001-6832-1300
Copyright, Publisher and Additional Information:	© 2017 Year IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works. Reproduced in accordance with the publisher's self-archiving policy.
Keywords:	Clustered IGBT; SiC MOSFET; hybrid switch
Dates:	Published: 8 August 2017
Institution:	The University of Sheffield
Academic Units:	The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Depositing User:	Symplectic Sheffield
Date Deposited:	14 May 2018 08:32
Last Modified:	19 Dec 2022 13:49
Published Version:	https://doi.org/10.1109/ISIE.2017.8001316
Status:	Published
Publisher:	IEEE
Refereed:	Yes
Identification Number:	https://doi.org/10.1109/ISIE.2017.8001316
Related URLs:	Author

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Analysis of a Clustered IGBT and Silicon Carbide MOSFET Hybrid Switch

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