Quantum Confinement Effects in GeSn/SiGeSn Heterostructure Lasers

Stange, D, Von den Driesch, N, Rainko, D et al. (10 more authors) (2018) Quantum Confinement Effects in GeSn/SiGeSn Heterostructure Lasers. In: Proceedings of IEDM 2017. 2017 IEEE International Electron Devices Meeting, 02-06 Dec 2017, San Francisco, CA, USA. IEEE , pp. 589-592. ISBN 978-1-5386-3559-9



  • Stange, D
  • Von den Driesch, N
  • Rainko, D
  • Zabel, T
  • Marzban, B
  • Ikonic, Z
  • Zaumseil, P
  • Capellini, G
  • Mantl, S
  • Witzens, J
  • Sigg, H
  • Grützmacher, D
  • Buca, D
Copyright, Publisher and Additional Information: U.S. Government work not protected by U.S. copyright. This is an author produced version of a paper published in the Proceedings of 2017 IEEE International Electron Devices Meeting (IEDM). Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. Uploaded in accordance with the publisher's self-archiving policy.
  • Published: 25 January 2018
  • Accepted: 30 September 2017
Institution: The University of Leeds
Depositing User: Symplectic Publications
Date Deposited: 08 Mar 2018 14:34
Last Modified: 20 Mar 2018 20:26
Status: Published
Publisher: IEEE
Identification Number: https://doi.org/10.1109/IEDM.2017.8268451

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