Realisation of magnetically and atomically abrupt half-metal/semiconductor interface: Co2FeSi0.5Al0.5/Ge(111)

Nedelkoski, Z, Kuerbanjiang, B, Glover, SE et al. (12 more authors) (2016) Realisation of magnetically and atomically abrupt half-metal/semiconductor interface: Co2FeSi0.5Al0.5/Ge(111). Scientific Reports, 6. 37282. ISSN 2045-2322



  • Nedelkoski, Z
  • Kuerbanjiang, B
  • Glover, SE
  • Sanchez, AM
  • Kepaptsoglou, D
  • Ghasemi, A
  • Burrows, CW
  • Yamada, S
  • Hamaya, K
  • Ramasse, QM ORCID logo
  • Hasnip, PJ
  • Hase, T
  • Bell, GR
  • Hirohata, A
  • Lazarov, VK
Copyright, Publisher and Additional Information: © The Author(s) 2016. This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit
  • Accepted: 26 October 2016
  • Published (online): 21 November 2016
  • Published: 21 November 2016
Institution: The University of Leeds
Academic Units: The University of Leeds > Faculty of Engineering & Physical Sciences (Leeds) > School of Chemical & Process Engineering (Leeds)
Depositing User: Symplectic Publications
Date Deposited: 02 Feb 2018 11:55
Last Modified: 02 Feb 2018 11:55
Status: Published
Publisher: Nature Publishing Group
Identification Number: