Richards, R.D. orcid.org/0000-0001-7043-8372, Harun, F., Cheong, J.S. et al. (6 more authors) (2016) GaAsBi: An Alternative to InGaAs Based Multiple Quantum Well Photovoltaics. In: Proceedings of the 43rd Photovoltaic Specialists Conference (PVSC) 2016. Photovoltaic Specialists Conference (PVSC), 05-10 Jun 2016, Portland, OR, USA. IEEE , pp. 1135-1137.
Abstract
A series of GaAsBi/GaAs multiple quantum well p-i-n diodes are characterized using IV, photocurrent and illuminated IV measurements. The results are compared to an InGaAs/GaAsP multiple quantum well control device of a design that has demonstrated excellent performance in triple junction photovoltaics. The extended absorption of the GaAsBi/GaAs devices, compared to that of the InGaAs/GaAsP device, suggests that GaAsBi/GaAs could present a viable alternative to InGaAs/GaAsP for quad junction photovoltaics.
Metadata
Authors/Creators: |
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Copyright, Publisher and Additional Information: | © 2017 IEEE. | ||||
Keywords: | bismuth compounds; gallium arsenide; quantum well devices; photovoltaic cells | ||||
Dates: |
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Institution: | The University of Sheffield | ||||
Academic Units: | The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield) | ||||
Funding Information: |
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Depositing User: | Symplectic Sheffield | ||||
Date Deposited: | 25 Oct 2017 14:36 | ||||
Last Modified: | 19 Dec 2022 13:37 | ||||
Published Version: | https://doi.org/10.1109/PVSC.2016.7749791 | ||||
Status: | Published | ||||
Publisher: | IEEE | ||||
Refereed: | Yes | ||||
Identification Number: | https://doi.org/10.1109/PVSC.2016.7749791 | ||||
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