Partial hybridisation of electron-hole states in an InAs/GaSb double quantum well heterostructure

Knox, CS, Morrison, C, Herling, F et al. (5 more authors) (2017) Partial hybridisation of electron-hole states in an InAs/GaSb double quantum well heterostructure. Semiconductor Science and Technology, 32 (10). 104002. ISSN 0268-1242

Abstract

Metadata

Authors/Creators:
  • Knox, CS
  • Morrison, C
  • Herling, F
  • Ritchie, DA
  • Newell, O
  • Myronov, M
  • Linfield, EH
  • Marrows, CH
Copyright, Publisher and Additional Information: © 2017 IOP Publishing Ltd. This is an author-created, un-copyedited version of an article published in Semiconductor Science and Technology. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at https://doi.org/10.1088/1361-6641/aa827e
Keywords: InAs/GaSb; effective mass; hybridisation
Dates:
  • Published: 1 October 2017
  • Accepted: 27 July 2017
  • Published (online): 30 August 2017
Institution: The University of Leeds
Academic Units: The University of Leeds > Faculty of Engineering & Physical Sciences (Leeds) > School of Physics and Astronomy (Leeds) > Condensed Matter (Leeds)
Funding Information:
FunderGrant number
EPSRCEP/M000923/1
Depositing User: Symplectic Publications
Date Deposited: 15 Sep 2017 11:21
Last Modified: 30 Aug 2018 00:39
Status: Published
Publisher: IOP Publishing
Identification Number: https://doi.org/10.1088/1361-6641/aa827e
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