Electron transport lifetimes in InSb/Al1-xInxSb quantum well 2DEGs

Hayes, D.G., Allford, C.P., Smith, G.V. et al. (7 more authors) (2017) Electron transport lifetimes in InSb/Al1-xInxSb quantum well 2DEGs. Semiconductor Science and Technology, 32 (8). 085002. ISSN 0268-1242



  • Hayes, D.G.
  • Allford, C.P.
  • Smith, G.V.
  • McIndo, C.
  • Hanks, L.A.
  • Gilbertson, A.M.
  • Cohen, L.F.
  • Zhang, S.
  • Clarke, E.M.
  • Buckle, P.D.
Copyright, Publisher and Additional Information: Original content from this work may be used under the terms of the Creative Commons Attribution 3.0 licence. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI.
Keywords: indium antimonide; quantum well 2DEG; magnetotransport; quantum lifetime; transport mobility
  • Accepted: 30 May 2017
  • Published (online): 30 May 2017
  • Published: 4 July 2017
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Depositing User: Symplectic Sheffield
Date Deposited: 25 Jul 2017 14:13
Last Modified: 25 Jul 2017 14:13
Published Version: https://doi.org/10.1088/1361-6641/aa75c8
Status: Published
Publisher: IOP Publishing
Refereed: Yes
Identification Number: https://doi.org/10.1088/1361-6641/aa75c8
Related URLs: