GeSn lasers for CMOS integration

Buca, D, von den Driesch, N, Stange, D et al. (9 more authors) (2017) GeSn lasers for CMOS integration. In: Electron Devices Meeting (IEDM), 2016 IEEE International. IEEE International Electron Devices Meeting (IEDM), 03-07 Dec 2016, San Francisco, USA. IEEE , pp. 588-591. ISBN 978-1-5090-3902-9

Abstract

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Authors/Creators:
  • Buca, D
  • von den Driesch, N
  • Stange, D
  • Wirths, S
  • Geiger, R
  • Schulte Braucks, C
  • Mantl, S
  • Hartmann, JM
  • Ikonic, Z
  • Witzens, J
  • Sigg, H
  • Grutzmacher, D
Copyright, Publisher and Additional Information: © 2016, IEEE. This is an author produced version of a paper published in Electron Devices Meeting (IEDM), 2016 IEEE International. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works. Uploaded in accordance with the publisher’s self-archiving policy.
Keywords: Light emitting diodes, Cavity resonators, Quantum well devices, Optical waveguides, Laser excitation, Waveguide lasers
Dates:
  • Published: 2 February 2017
  • Accepted: 1 September 2016
  • Published (online): 2 February 2017
Institution: The University of Leeds
Academic Units: The University of Leeds > Faculty of Engineering & Physical Sciences (Leeds) > School of Electronic & Electrical Engineering (Leeds) > Pollard Institute (Leeds)
Funding Information:
FunderGrant number
Royal SocietyIE131593
Depositing User: Symplectic Publications
Date Deposited: 08 Mar 2017 10:03
Last Modified: 16 Jan 2018 21:16
Published Version: https://doi.org/10.1109/IEDM.2016.7838472
Status: Published
Publisher: IEEE
Identification Number: https://doi.org/10.1109/IEDM.2016.7838472

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