Nanoionics-Based Three-Terminal Synaptic Device Using Zinc Oxide

Balakrishna Pillai, P. and De Souza, M.M. (2017) Nanoionics-Based Three-Terminal Synaptic Device Using Zinc Oxide. ACS Applied Materials and Interfaces , 9 (2). pp. 1609-1618. ISSN 1944-8244



Copyright, Publisher and Additional Information: © 2016 American Chemical Society. This is an author produced version of a paper subsequently published in ACS Applied Materials and Interfaces. Uploaded in accordance with the publisher's self-archiving policy.
Keywords: zinc oxide; synaptic thin film transistors; tantalum oxide; oxygen vacancies; memory TFTs
  • Accepted: 19 December 2016
  • Published (online): 19 December 2016
  • Published: 18 January 2017
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
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Depositing User: Symplectic Sheffield
Date Deposited: 10 Jan 2017 15:16
Last Modified: 30 Jun 2023 16:12
Published Version:
Status: Published
Publisher: American Chemical Society
Refereed: Yes
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