Low-frequency noise properties of p-type GaAs/AlGaAs heterojunction detectors

Wolde, S, Lao, YF, Pitigala, PKDDP et al. (4 more authors) (2016) Low-frequency noise properties of p-type GaAs/AlGaAs heterojunction detectors. Infrared Physics and Technology, 78. pp. 99-104. ISSN 1350-4495



  • Wolde, S
  • Lao, YF
  • Pitigala, PKDDP
  • Perera, AGU
  • Li, L
  • Khanna, SP
  • Linfield, EH
Copyright, Publisher and Additional Information: © 2016 Elsevier B.V. All rights reserved. This is an author produced version of a paper published in Infrared Physics and Technology. Uploaded in accordance with the publisher's self-archiving policy.
Keywords: Graded barrier; Noise; AlGaAs; GaAs; Gain
  • Published: 1 September 2016
  • Accepted: 21 July 2016
  • Published (online): 22 July 2016
Institution: The University of Leeds
Academic Units: The University of Leeds > Faculty of Engineering & Physical Sciences (Leeds) > School of Electronic & Electrical Engineering (Leeds) > Pollard Institute (Leeds)
Depositing User: Symplectic Publications
Date Deposited: 29 Sep 2016 13:08
Last Modified: 22 Jul 2017 14:38
Published Version: https://dx.doi.org/10.1016/j.infrared.2016.07.018
Status: Published
Publisher: Elsevier
Identification Number: https://doi.org/10.1016/j.infrared.2016.07.018

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