Temperature-dependent modulated reflectance and photoluminescence of InAs-GaAs and InAs-InGaAs-GaAs quantum dot heterostructures

Rimkus, A, Pozingyte, E, Nedzinskas, R et al. (5 more authors) (2016) Temperature-dependent modulated reflectance and photoluminescence of InAs-GaAs and InAs-InGaAs-GaAs quantum dot heterostructures. Optical and Quantum Electronics, 48 (3). UNSP 202. ISSN 0306-8919

Abstract

Metadata

Authors/Creators:
  • Rimkus, A
  • Pozingyte, E
  • Nedzinskas, R
  • Cechavicius, B
  • Kavaliauskas, J
  • Valusis, G
  • Li, L
  • Linfield, EH
Copyright, Publisher and Additional Information: © 2016, Springer Science+Business Media. This is an author produced version of a paper published in Optical and Quantum Electronics. Uploaded in accordance with the publisher's self-archiving policy. The final publication is available at Springer via http://doi.org/10.1007/s11082-016-0446-9.
Keywords: InAs quantum dots; Modulated reflectance; Photoluminescence; Optical transitions; Electronic structure
Dates:
  • Published: 1 March 2016
  • Accepted: 28 January 2016
  • Published (online): 20 February 2016
Institution: The University of Leeds
Academic Units: The University of Leeds > Faculty of Engineering & Physical Sciences (Leeds) > School of Electronic & Electrical Engineering (Leeds) > Pollard Institute (Leeds)
Depositing User: Symplectic Publications
Date Deposited: 28 Oct 2016 12:33
Last Modified: 14 Apr 2017 02:45
Published Version: http://doi.org/10.1007/s11082-016-0446-9
Status: Published
Publisher: Springer Verlag
Identification Number: https://doi.org/10.1007/s11082-016-0446-9
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