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Number of items: 38.

Article

Tan, C.H., Velichko, A., Lim, L.W. et al. (1 more author) (2019) Few-photon detection using InAs avalanche photodiodes. Optics Express, 27 (4). pp. 5835-5842. ISSN 1094-4087

Petticrew, J.D. orcid.org/0000-0003-3424-2457, Dimler, S. and Ng, J.S. (2018) Simple Monte Carlo Simulator for modelling Linear Mode and Geiger Mode Avalanche Photodiodes in C++. Journal of Open Research Software, 6 (1). 17. ISSN 2049-9647

Pinel, L.L.G. orcid.org/0000-0001-8603-5631, Dimler, S.J., Zhou, X. et al. (4 more authors) (2018) Effects of carrier injection profile on low noise thin Al0.85Ga0.15As0.56Sb0.44 avalanche photodiodes. Optics Express, 26 (3). pp. 3568-3576.

Abdullah, S., Tan, C.H., Zhou, X. et al. (3 more authors) (2017) Investigation of temperature and temporal stability of AlGaAsSb avalanche photodiodes. Optics Express, 25 (26). pp. 33610-33616.

Petticrew, J.D. orcid.org/0000-0003-3424-2457, Dimler, S.J., Zhou, X. et al. (3 more authors) (2017) Avalanche Breakdown Timing Statistics for Silicon Single Photon Avalanche Diodes. IEEE Journal of Selected Topics in Quantum Electronics, 24 (2). ISSN 1077-260X

Cheong, J.S., Baharuddin, A.N.A.P., Ng, J.S. et al. (2 more authors) (2017) Absorption coefficients in AlGaInP lattice-matched to GaAs. Solar Energy Materials and Solar Cells, 164. pp. 28-31. ISSN 0927-0248

Zhou, X., Tan, C.H., Zhang, S. et al. (4 more authors) (2017) Thin Al 1− Ga As 0.56 Sb 0.44 diodes with extremely weak temperature dependence of avalanche breakdown. Royal Society Open Science, 4. 170071. p. 170071.

Zhou, X., White, B., Meng, X. et al. (7 more authors) (2017) Proton radiation effect on InAs avalanche photodiodes. Optics Express, 25 (3). pp. 2818-2825.

Zhou, X., Zhang, S., David, J. et al. (2 more authors) (2016) Avalanche breakdown characteristics of Al1-xGaxAs0.56Sb0.44 quaternary alloys. IEEE Photonics Technology Letters, 28 (22). pp. 2495-2498. ISSN 1041-1135

Xie, S., Zhou, X. orcid.org/0000-0001-9022-5032, Zhang, S. et al. (5 more authors) (2016) InGaAs/AlGaAsSb avalanche photodiode with high gain - bandwidth product. Optics Express, 24 (21). pp. 24242-24247. ISSN 1094-4087

Lioliou, G., Meng, X., Ng, J.S. orcid.org/0000-0002-1064-0410 et al. (1 more author) (2016) Temperature dependent characterization of gallium arsenide X-ray mesa p-i-n photodiodes. Journal of Applied Physics, 119 (12). 124507-1-124507-9. ISSN 0021-8979

Lioliou, G., Meng, X., Ng, J.S. et al. (1 more author) (2016) Characterization of gallium arsenide X-ray mesa p-i-n photodiodes at room temperature. Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 813. pp. 1-9. ISSN 0168-9002

Auckloo, A., Cheong, J.S., Meng, X. et al. (5 more authors) (2016) Al0.52In0.48P avalanche photodiodes for soft X-ray spectroscopy. Journal of Instrumentation, 11 (3). P03021. ISSN 1748-0221

Meng, X., Xie, S., Zhou, X. et al. (5 more authors) (2016) InGaAs/InAlAs single photon avalanche diode for 1550 nm photons. Royal Society Open Science, 3 (3). 150584. ISSN 2054-5703

Qiao, L., Cheong, J.S., Ong, J.S.L. et al. (4 more authors) (2015) Avalanche Noise in Al0.52In0.48P Diodes. IEEE Photonics Technology Letters, 28 (4). pp. 481-484. ISSN 1041-1135

Meng, X., Zhou, X., Zhang, S. et al. (3 more authors) (2015) InAs avalanche photodiodes as X-ray detectors. Journal of Instrumentation, 10 (10). ISSN 1748-0221

Cheong, J.S., Ng, J.S., Krysa, A.B. et al. (2 more authors) (2015) Determination of absorption coefficients in AlInP lattice matched to GaAs. Journal of Physics D: Applied Physics, 48 (40). 5101. ISSN 0022-3727

Zhou, X., Meng, X., Krysa, A.B. et al. (3 more authors) (2015) InAs Photodiodes for 3.43 mu(text)m Radiation Thermometry. IEEE Sensors Journal, 15 (10). 5555 - 5560. ISSN 1530-437X

Barnett, A.M., Lioliou, G. and Ng, J.S. (2014) Characterization of room temperature AlGaAs soft X-ray mesa photodiodes. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment , 774. 29 - 33. ISSN 0168-9002

Meng, X., Tan, C.H., Dimler, S. et al. (2 more authors) (2014) 1550 nm InGaAs/InAlAs single photon avalanche diode at room temperature. Optics Express, 22 (19). 22608 - 22615.

Ng, J.S., Meng, X., Lees, J.E. et al. (2 more authors) (2014) Fabrication study of GaAs mesa diodes for X-ray detection. Journal of Instrumentation, 9. T08005. ISSN 1748-0221

Gomes, R.B., Tan, C.H., Meng, X. et al. (2 more authors) (2014) GaAs/Al 0.8 Ga 0.2 As avalanche photodiodes for soft X-ray spectroscopy. Journal of Instrumentation, 9. P03014.

Ong, J.S.L., Ng, J.S., Krysa, A.B. et al. (1 more author) (2014) Temperature dependence of avalanche multiplication and breakdown voltage in Al0.52In0.48P. Journal of Applied Physics, 115. 064507. ISSN 0021-8979

El-Howayek, G., Zhang, C., Li, Y. et al. (3 more authors) (2014) On the Use of Gaussian Approximation in Analyzing the Performance of Optical Receivers. IEEE Photonics Journal, 6. 6800508. ISSN 1943-0655

Tan, S.L., Soong, W.M., Green, J.E. et al. (9 more authors) (2013) Experimental evaluation of impact ionization in dilute nitride GaInNAs diodes. Applied Physics Letters, 103. 102101. ISSN 0003-6951

Xie, J., Ng, J.S. and Tan, C.H. (2013) An InGaAs/AlAsSb Avalanche Photodiode With a Small Temperature Coefficient of Breakdown. IEEE Photonics Journal, 5 (4). ISSN 1943-0655

Sandall, I.C., Ng, J.S., Xie, S. et al. (2 more authors) (2013) Temperature dependence of impact ionization in InAs. Optics Express, 21 (7). 8630 - 8637. ISSN 1094-4087

Gomes, R.B., Tan, C.H., Lees, J.E. et al. (2 more authors) (2012) Effects of Dead Space on Avalanche Gain Distribution of X-Ray Avalanche Photodiodes. IEEE Transactions on Electron Devices, 59 (4). 1063 - 1067. ISSN 0018-9383

Ong, D.S.G., Ng, J.S., Hayat, M.M. et al. (2 more authors) (2009) Optimization of InP APDs for high-speed lightwave systems. Journal of Lightwave Technology, 27 (15). pp. 3294-3302. ISSN 0733-8724

Mun, S.C.L.T., Tan, C.H., Dimler, S.J. et al. (4 more authors) (2009) A theoretical comparison of the breakdown behavior of In0.52Al0.48As and InP near-infrared single-photon avalanche photodiodes. IEEE Journal of Quantum Electronics, 45 (5-6). pp. 566-571. ISSN 0018-9197

Goh, Y.L., Ng, J.S., Tan, C.H. et al. (2 more authors) (2005) Excess noise measurement in In0.53Ga0.47As. IEEE Photonics Technology Letters, 17 (11). pp. 2412-2414. ISSN 1041-1135

Ng, J.S., Tan, C.H., David, J.P.R. et al. (1 more author) (2005) Effect of impact ionization in the InGaAs absorber on excess noise of avalanche photodiodes. IEEE Journal of Quantum Electronics, 41 (8). pp. 1092-1096. ISSN 0018-9197

Ng, J.S., Tan, C.H., David, J.P.R. et al. (1 more author) (2005) Effect of impact ionization in the InGaAs absorber on excess noise of avalanche photodiodes. IEEE Journal of Quantum Electronics, 41 (8). pp. 1092-1096. ISSN 0018-9197

Ng, J.S., Tan, C.H., David, J.P.R. et al. (2 more authors) (2003) Field dependence of impact ionization coefficients in In0.53Ga0.47As. IEEE Transactions on Electron Devices, 50 (4). pp. 901-905. ISSN 0018-9383

Ng, J.S., Tan, C.H., Ng, B.K. et al. (5 more authors) (2002) Effect of dead space on avalanche speed. IEEE Transactions on Electron Devices, 49 (4). pp. 544-549. ISSN 0018-9383

Proceedings Paper

Tan, C.H. orcid.org/0000-0002-8900-9452, Ng, J.S. orcid.org/0000-0002-1064-0410, Zhou, X. et al. (3 more authors) (2017) Progress in low light-level InAs detectors- towards Geiger-mode detection. In: Proceedings, Advanced Photon Counting Techniques XI. SPIE Commercial + Scientific Sensing and Imaging, 2017, 09-13 Apr 2017, California, United States. SPIE . ISBN 978-1-5106-0926-6

Ng, J.S. orcid.org/0000-0002-1064-0410, Zhou, X., Auckloo, A. et al. (5 more authors) (2016) High sensitivity InAs photodiodes for mid-infrared detection. In: Proceedings of SPIE. Electro-Optical Remote Sensing X, 26 - 27/09/2016, Edinburgh. Society of Photo-optical Instrumentation Engineers . ISBN 978-1-5106-0381-3

Zhou, X., Ng, J.S. and Tan, C.H. (2015) In As photodiode for low temperature sensing. In: Meynart, R., Neeck, S.P. and Shimoda, H., (eds.) SPIE Proceedings. Sensors, Systems, and Next-Generation Satellites XIX, September 21, 2015, Toulouse, France. SPIE , Bellingham .

This list was generated on Mon Oct 14 01:25:56 2019 BST.