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Number of items: 18.

Article

Walkley, B. orcid.org/0000-0003-1069-1362, San Nicolas, R., Sani, M.A. et al. (4 more authors) (2016) Phase evolution of C-(N)-A-S-H/N-A-S-H gel blends investigated via alkali-activation of synthetic calcium aluminosilicate precursors. Cement and Concrete Research, 89. pp. 120-135. ISSN 0008-8846

Ng, J.S., Tan, C.H., David, J.P.R. et al. (1 more author) (2005) Effect of impact ionization in the InGaAs absorber on excess noise of avalanche photodiodes. IEEE Journal of Quantum Electronics, 41 (8). pp. 1092-1096. ISSN 0018-9197

Ng, J.S., Tan, C.H., David, J.P.R. et al. (1 more author) (2005) Effect of impact ionization in the InGaAs absorber on excess noise of avalanche photodiodes. IEEE Journal of Quantum Electronics, 41 (8). pp. 1092-1096. ISSN 0018-9197

Groves, C., Tan, C.H., David, J.P.R. et al. (2 more authors) (2005) Exponential time response in analogue and Geiger mode avalanche photodiodes. IEEE Transactions on Electron Devices, 52 (7). pp. 1527-1534. ISSN 0018-9383

Groves, C., Chia, C.K., Tozer, R.C. et al. (2 more authors) (2005) Avalanche noise characteristics of single Al/sub x/Ga/sub 1-x/As(0.3. IEEE Journal of Quantum Electronics, 41 (1). pp. 70-75. ISSN 0018-9197

Groves, C., Chia, C.K., Tozer, R.C. et al. (2 more authors) (2005) Avalanche noise characteristics of single AlxGa1-xAs(0.3 < x < 0.6)-GaAs heterojunction APDs. IEEE Journal of Quantum Electronics, 41 (1). pp. 70-75. ISSN 0018-9197

Groves, C., Ghin, R., David, J.P.R. et al. (1 more author) (2003) Temperature dependence of impact ionization in GaAs. IEEE Transactions on Electron Devices, 50 (10). pp. 2027-2031. ISSN 0018-9383

Ng, B.K., David, J.P.R., Tozer, R.C. et al. (4 more authors) (2003) Nonlocal effects in thin 4H-SiC UV avalanche photodiodes. IEEE Transactions on Electron Devices, 50 (8). pp. 1724-1732. ISSN 0018-9383

Ng, J.S., Tan, C.H., David, J.P.R. et al. (2 more authors) (2003) Field dependence of impact ionization coefficients in In0.53Ga0.47As. IEEE Transactions on Electron Devices, 50 (4). pp. 901-905. ISSN 0018-9383

Hambleton, P.J., Ng, B.K., Plimmer, S.A. et al. (2 more authors) (2003) The effects of nonlocal impact ionization on the speed of avalanche photodiodes. IEEE Transactions on Electron Devices, 50 (2). pp. 347-351. ISSN 0018-9383

Ng, B.K., David, J.P.R., Rees, G.J. et al. (3 more authors) (2002) Avalanche multiplication and breakdown in AlxGa1-xAs (x < 0-9). IEEE Transactions on Electron Devices, 49 (12). pp. 2349-2351. ISSN 0018-9383

Ng, B.K., Yan, F., David, J.P.R. et al. (4 more authors) (2002) Multiplication and excess noise characteristics of thin 4H-SiC UV avalanche photodiodes. IEEE Photonics Technology Letters, 14 (9). pp. 1342-1344. ISSN 1041-1135

Ng, J.S., Tan, C.H., Ng, B.K. et al. (5 more authors) (2002) Effect of dead space on avalanche speed. IEEE Transactions on Electron Devices, 49 (4). pp. 544-549. ISSN 0018-9383

Ng, B.K., David, J.P.R., Tozer, R.C. et al. (3 more authors) (2002) Excess noise characteristics of Al0.8Ga0.2As avalanche photodiodes. IEEE Photonics Technology Letters, 14 (4). pp. 522-524. ISSN 1041-1135

Ng, B.K., David, J.P.R., Plimmer, S.A. et al. (4 more authors) (2001) Avalanche multiplication characteristics of Al0.8Ga0.2As diodes. IEEE Transactions on Electron Devices, 48 (10). pp. 2198-2204. ISSN 0018-9383

Tan, C.H., David, J.P.R., Plimmer, S.A. et al. (3 more authors) (2001) Low multiplication noise thin Al0.6Ga0.4As avalanche photodiodes. IEEE Transactions on Electron Devices, 48 (7). pp. 1310-1317. ISSN 0018-9383

Plimmer, S.A., David, J.P.R., Grey, R. et al. (1 more author) (2000) Avalanche multiplication in AlxGa1-xAs (x=0to0.60). IEEE Transactions on Electron Devices, 47 (5). pp. 1089-1097. ISSN 0018-9383

Li, K.F., Ong, D.S., David, J.P.R. et al. (5 more authors) (2000) Avalanche noise characteristics of thin GaAs structures with distributed carrier generation. IEEE Transactions on Electron Devices, 47 (5). pp. 910-914. ISSN 0018-9383

This list was generated on Sun Aug 11 00:13:03 2019 BST.