Items where authors include "Mohsenzade, S."

Article

Naghibi, J., Mohsenzade, S., Mehran, K. et al. (1 more author) (2023) Gate oxide degradation condition monitoring technique for high-frequency applications of silicon carbide power MOSFETs. IEEE Transactions on Power Electronics, 38 (1). pp. 1079-1091. ISSN 0885-8993

Proceedings Paper

Naghibi, J., Mohsenzade, S., Iqbal, S. et al. (2 more authors) (2022) On the effect of SiC power MOSFET gate oxide degradation in high frequency phase leg-based applications. In: IEEE Energy Conversion Congress and Expo - ECCE 2022. IEEE Energy Conversion Congress and Expo - ECCE 2022, 09-13 Oct 2022, Detroit, Michigan, USA. Institute of Electrical and Electronics Engineers , pp. 1-6. ISBN 978-1-7281-9387-8

Naghibi, J., Mohsenzade, S., Mehran, K. et al. (1 more author) (2022) Evaluation of drain-source voltage in switch transient time intervals as gate oxide degradation precursor of SiC power MOSFETs. In: Proceedings of 2022 24th European Conference on Power Electronics and Applications (EPE'22 ECCE Europe). 2022 24th European Conference on Power Electronics and Applications (EPE'22 ECCE Europe), 05-09 Sep 2022, Hanover, Germany. IEEE , Hannover, Germany . ISBN 9781665487009