Browse by Person

Up a level
Export as [feed] Atom [feed] RSS 1.0 [feed] RSS 2.0
Group by: Item Type | No Grouping
Number of items: 11.

Article

Lim, L., Tan, C.H., Ng, J. et al. (2 more authors) (2019) Improved planar InAs avalanche photodiodes with reduced dark current and increased responsivity. Journal of Lightwave Technology, 37 (10). pp. 2375-2379. ISSN 0733-8724

Lioliu, G., Krysa, A. orcid.org/0000-0001-8320-7354 and Barnett, A. (2018) Energy response characterization of InGaP X-ray detectors. Journal of Applied Physics, 124 (19). 195704. ISSN 0021-8979

Butera, S., Whitaker, M.D.C., Krysa, A. orcid.org/0000-0001-8320-7354 et al. (1 more author) (2018) 6 μm thick AlInP 55Fe X-ray photovoltaic and 63Ni betavoltaic cells. Semiconductor Science and Technology. ISSN 0268-1242

Lu, Q., Zhou, X., Krysa, A. orcid.org/0000-0001-8320-7354 et al. (4 more authors) (2018) InAs thermophotovoltaic cells with high quantum efficiency for waste heat recovery applications below 1000 degrees C. Solar Energy Materials and Solar Cells, 179. pp. 334-338. ISSN 0927-0248

Müller, T., Skiba-Szymanska, J., Krysa, A. orcid.org/0000-0001-8320-7354 et al. (7 more authors) (2018) A quantum light emitting diode for the standard telecom window around 1550 nm. Nature Communications, 9. 862. ISSN 2041-1723

Skiba-Szymanska, J., Stevenson, R.M., Varnava, C. et al. (12 more authors) (2016) Universal growth scheme for entanglement-ready quantum dots. arXiv. (Unpublished)

Yee, M., Ng, W.K., David, J.P.R. et al. (3 more authors) (2003) Temperature dependence of breakdown and avalanche multiplication in In0.53Ga0.47As diodes and heterojunction bipolar transistors. IEEE Transactions on Electron Devices, 50 (10). pp. 2021-2026. ISSN 0018-9383

Proceedings Paper

Tan, C.H. orcid.org/0000-0002-8900-9452, Ng, J.S. orcid.org/0000-0002-1064-0410, Zhou, X. et al. (3 more authors) (2017) Progress in low light-level InAs detectors- towards Geiger-mode detection. In: Proceedings, Advanced Photon Counting Techniques XI. SPIE Commercial + Scientific Sensing and Imaging, 2017, 09-13 Apr 2017, California, United States. SPIE . ISBN 978-1-5106-0926-6

Ng, J.S. orcid.org/0000-0002-1064-0410, Zhou, X., Auckloo, A. et al. (5 more authors) (2016) High sensitivity InAs photodiodes for mid-infrared detection. In: Proceedings of SPIE. Electro-Optical Remote Sensing X, 26 - 27/09/2016, Edinburgh. Society of Photo-optical Instrumentation Engineers . ISBN 978-1-5106-0381-3

Krysa, A. orcid.org/0000-0001-8320-7354, Roberts, J.S., Devenson, J. et al. (4 more authors) (2016) Growth and characterisation of InAsP/AlGaInP QD laser structures. In: Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS), 2016. Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS), 2016, 26-30 Jun 2016, Toyama, Japan. IEEE . ISBN 978-1-5090-1964-9

Krysa, A. orcid.org/0000-0001-8320-7354, Revin, D.G., Atkins, C. et al. (2 more authors) (2012) Metalorganic vapour phase epitaxy of InGaAs/InAlAs and GaAs/AlGaAs quantum cascade laser structures. In: Proceedings of the 11th international conference on Infrared Optoelectronics: Materials and Devices (MIOMD‐XI). The 11th International Conference on Infrared Optoelectronics: Materials and Devices (MIOMD-XI), 04-08 Sep 2012, Chicago, US. MIOMD-XI .

This list was generated on Mon Aug 19 01:13:54 2019 BST.