Hybrid architecture for shallow accumulation mode AlGaAs/GaAs heterostructures with epitaxial gates

MacLeod, S.J., See, A.M., Hamilton, A.R. et al. (5 more authors) (2015) Hybrid architecture for shallow accumulation mode AlGaAs/GaAs heterostructures with epitaxial gates. Applied Physics Letters, 106. 012105 . ISSN 0003-6951

Abstract

Metadata

Authors/Creators:
  • MacLeod, S.J.
  • See, A.M.
  • Hamilton, A.R.
  • Farrer, I.
  • Ritchie, D.A.
  • Ritzmann, J.
  • Ludwig, A.
  • Wieck, A.D.
Copyright, Publisher and Additional Information: Copyright 2015 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Appl. Phys. Lett. 106, 012105 (2015) and may be found at http://dx.doi.org/10.1063/1.4905210.
Dates:
  • Published: 5 January 2015
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Depositing User: Symplectic Sheffield
Date Deposited: 17 Jul 2015 10:46
Last Modified: 23 Mar 2018 17:41
Published Version: http://dx.doi.org/10.1063/1.4905210
Status: Published
Publisher: American Institute of Physics
Refereed: Yes
Identification Number: https://doi.org/10.1063/1.4905210
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