A theoretical comparison of the breakdown behavior of In0.52Al0.48As and InP near-infrared single-photon avalanche photodiodes

Mun, S.C.L.T., Tan, C.H., Dimler, S.J. et al. (4 more authors) (2009) A theoretical comparison of the breakdown behavior of In0.52Al0.48As and InP near-infrared single-photon avalanche photodiodes. IEEE Journal of Quantum Electronics, 45 (5-6). pp. 566-571. ISSN 0018-9197

Abstract

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Authors/Creators:
  • Mun, S.C.L.T.
  • Tan, C.H. (C.H.Tan@sheffield.ac.uk)
  • Dimler, S.J.
  • Tan, L.J.J.
  • Ng, J.S.
  • Goh, Y.L.
  • David, J.P.R.
Copyright, Publisher and Additional Information: © Copyright 2009 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
Keywords: Avalanche breakdown; InP; In0.52Al0.48As; single-photon avalanche photodiodes (SPADs); timing statistics
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Depositing User: Miss Anthea Tucker
Date Deposited: 29 Jun 2009 14:50
Last Modified: 06 Jun 2014 08:51
Published Version: http://dx.doi.org/10.1109/JQE.2009.2013094
Status: Published
Publisher: Institute of Electrical and Electronics Engineers
Refereed: Yes
Identification Number: https://doi.org/10.1109/JQE.2009.2013094

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