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A theoretical comparison of the breakdown behavior of In0.52Al0.48As and InP near-infrared single-photon avalanche photodiodes

Mun, S.C.L.T., Tan, C.H., Dimler, S.J., Tan, L.J.J., Ng, J.S., Goh, Y.L. and David, J.P.R. (2009) A theoretical comparison of the breakdown behavior of In0.52Al0.48As and InP near-infrared single-photon avalanche photodiodes. IEEE Journal of Quantum Electronics, 45 (5-6). pp. 566-571. ISSN 0018-9197


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We study the breakdown characteristics and timing statistics of InP and In0.52Al0.48As single-photon avalanche photodiodes (SPADs) with avalanche widths ranging from 0.2 to 1.0 mu m at room temperature using a random ionization path-length model. Our results show that, for a given avalanche width, the breakdown probability of In0.52Al0.48As SPADs increases faster with overbias than InP SPADs. When we compared their timing statistics, we observed that, for a given breakdown probability, InP requires a shorter time to reach breakdown and exhibits a smaller timing jitter than In0.52Al0.48As. However, due to the lower dark count probability and faster rise in breakdown probability with overbias, In0.52Al0.48As SPADs with avalanche widths <= 0.5 mu m are more suitable for single-photon detection at telecommunication wavelengths than InP SPADs. Moreover, we predict that, in InP SPADs with avalanche widths <= 0.3 mu m and In0.52Al0.48As SPADs with avalanche widths <= 0.2 mu m, the dark count probability is higher than the photon count probability for all applied biases.

Item Type: Article
Copyright, Publisher and Additional Information: © Copyright 2009 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
Keywords: Avalanche breakdown; InP; In0.52Al0.48As; single-photon avalanche photodiodes (SPADs); timing statistics
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Depositing User: Miss Anthea Tucker
Date Deposited: 29 Jun 2009 14:50
Last Modified: 06 Jun 2014 08:51
Published Version: http://dx.doi.org/10.1109/JQE.2009.2013094
Status: Published
Publisher: Institute of Electrical and Electronics Engineers
Refereed: Yes
Identification Number: 10.1109/JQE.2009.2013094
URI: http://eprints.whiterose.ac.uk/id/eprint/8731

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