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The role of high growth temperature GaAs spacer layers in 1.3-/spl mu/m In(Ga)As quantum-dot lasers

Walker, C.L., Sandall, I.C., Smowton, P.M., Sellers, I.R., Mowbray, D.J., Liu, H.Y. and Hopkinson, M. (2005) The role of high growth temperature GaAs spacer layers in 1.3-/spl mu/m In(Ga)As quantum-dot lasers. IEEE Photonics Technology Letters, 17 (10). pp. 2011-2013. ISSN 1041-1135

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Abstract

We investigate the mechanisms by which high growth temperature spacer layers (HGTSLs) reduce the threshold current of 1.3-/spl mu/m emitting multilayer quantum-dot lasers. Measured optical loss and gain spectra are used to characterize samples that are nominally identical except for the HGTSL. We find that the use of the HGTSL leads to the internal optical mode loss being reduced from 15 /spl plusmn/ 2 to 3.5 /spl plusmn/ 2 cm/sup -1/, better defined absorption features, and more absorption at the ground state resulting from reduced inhomogenous broadening and a greater dot density. These characteristics, together with a reduced defect density, lead to greater modal gain at a given current density.

Item Type: Article
Copyright, Publisher and Additional Information: Copyright © 2005 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
Keywords: optical gain, optical loss, quantum dots (QDs), semiconductor lasers
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
The University of Sheffield > University of Sheffield Research Centres and Institutes > EPSRC National Centre for III-V Technologies (Sheffield)
The University of Sheffield > Faculty of Science (Sheffield) > Department of Physics and Astronomy (Sheffield)
Depositing User: Repository Officer
Date Deposited: 02 Dec 2005
Last Modified: 08 Feb 2013 16:48
Published Version: http://dx.doi.org/10.1109/LPT.2005.854393
Status: Published
Refereed: Yes
Identification Number: 10.1109/LPT.2005.854393
URI: http://eprints.whiterose.ac.uk/id/eprint/817

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