The role of high growth temperature GaAs spacer layers in 1.3-/spl mu/m In(Ga)As quantum-dot lasers

Walker, C.L., Sandall, I.C., Smowton, P.M. et al. (4 more authors) (2005) The role of high growth temperature GaAs spacer layers in 1.3-/spl mu/m In(Ga)As quantum-dot lasers. IEEE Photonics Technology Letters, 17 (10). pp. 2011-2013. ISSN 1041-1135

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Authors/Creators:
  • Walker, C.L.
  • Sandall, I.C.
  • Smowton, P.M.
  • Sellers, I.R.
  • Mowbray, D.J.
  • Liu, H.Y.
  • Hopkinson, M.
Copyright, Publisher and Additional Information: Copyright © 2005 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
Keywords: optical gain, optical loss, quantum dots (QDs), semiconductor lasers
Dates:
  • Published: October 2005
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
The University of Sheffield > University of Sheffield Research Centres and Institutes > EPSRC National Centre for III-V Technologies (Sheffield)
The University of Sheffield > Faculty of Science (Sheffield) > Department of Physics and Astronomy (Sheffield)
Depositing User: Repository Officer
Date Deposited: 02 Dec 2005
Last Modified: 08 Jun 2014 18:14
Published Version: http://dx.doi.org/10.1109/LPT.2005.854393
Status: Published
Refereed: Yes
Identification Number: https://doi.org/10.1109/LPT.2005.854393

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