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Improved Temperature Performance of 1.31-mu/m Quantum Dot Lasers by Optimized Ridge Waveguide Design

Ray, S.K., Groom, K.M., Hogg, R.A., Liu, H.Y., Hopkinson, M., Badcock, T., Mowbray, D.J. and Skolnick, M.S. (2005) Improved Temperature Performance of 1.31-mu/m Quantum Dot Lasers by Optimized Ridge Waveguide Design. IEEE Photonics Technology Letters, 17 (9). pp. 1785-1787. ISSN 1041-1135


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In this letter, we demonstrate the importance of the fabricated device structure for the external differential efficiency, threshold current density, and maximum operating temperature for ground state operation of a 1.31-mu/m quantum dot laser. The introduction of a shallow ridge etch design and selective electroplating of the gold bondpads is demonstrated to offer improved performance in comparison to a deep ridge etch design with thinner evaporated gold bondpads.

Item Type: Article
Copyright, Publisher and Additional Information: Copyright © 2005 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
Keywords: dot-in-well (DWELL), quantum dots (QDs)
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
The University of Sheffield > University of Sheffield Research Centres and Institutes > EPSRC National Centre for III-V Technologies (Sheffield)
The University of Sheffield > Faculty of Science (Sheffield) > Department of Physics and Astronomy (Sheffield)
Depositing User: Repository Officer
Date Deposited: 02 Dec 2005
Last Modified: 08 Jun 2014 05:49
Published Version: http://dx.doi.org/10.1109/LPT.2005.853530
Status: Published
Refereed: Yes
Identification Number: 10.1109/LPT.2005.853530
URI: http://eprints.whiterose.ac.uk/id/eprint/816

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