High-performance three-layer 1.3-/spl mu/m InAs-GaAs quantum-dot lasers with very low continuous-wave room-temperature threshold currents

Liu, H.Y., Childs, D.T., Badcock, T.J. et al. (7 more authors) (2005) High-performance three-layer 1.3-/spl mu/m InAs-GaAs quantum-dot lasers with very low continuous-wave room-temperature threshold currents. IEEE Photonics Technology Letters, 17 (6). pp. 1139-1141. ISSN 1041-1135

Abstract

Metadata

Authors/Creators:
  • Liu, H.Y.
  • Childs, D.T.
  • Badcock, T.J.
  • Groom, K.M.
  • Sellers, I.R.
  • Hopkinson, M.
  • Hogg, R.A.
  • Robbins, D.J.
  • Mowbray, D.J.
  • Skolnick, M.S.
Copyright, Publisher and Additional Information: Copyright © 2005 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
Keywords: epitaxial growth, quantum dots (QDs), semiconductor diodes, semiconductor lasers
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
The University of Sheffield > University of Sheffield Research Centres and Institutes > EPSRC National Centre for III-V Technologies (Sheffield)
The University of Sheffield > Faculty of Science (Sheffield) > Department of Physics and Astronomy (Sheffield)
Depositing User: Repository Officer
Date Deposited: 02 Dec 2005
Last Modified: 06 Jun 2014 21:51
Published Version: http://dx.doi.org/10.1109/LPT.2005.846948
Status: Published
Refereed: Yes
Identification Number: https://doi.org/10.1109/LPT.2005.846948

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