Liu, H.Y., Childs, D.T., Badcock, T.J., Groom, K.M., Sellers, I.R., Hopkinson, M., Hogg, R.A., Robbins, D.J., Mowbray, D.J. and Skolnick, M.S. (2005) High-performance three-layer 1.3-/spl mu/m InAs-GaAs quantum-dot lasers with very low continuous-wave room-temperature threshold currents. IEEE Photonics Technology Letters, 17 (6). pp. 1139-1141. ISSN 1041-1135
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Published Version: http://dx.doi.org/10.1109/LPT.2005.846948
Abstract
The combination of high-growth-temperature GaAs spacer layers and high-reflectivity (HR)-coated facets has been utilized to obtain low threshold currents and threshold current densities for 1.3-/spl mu/m multilayer InAs-GaAs quantum-dot lasers. A very low continuous-wave (CW) room-temperature threshold current of 1.5 mA and a threshold current density of 18.8 A/cm/sup 2/ are achieved for a three-layer device with a 1-mm HR/HR cavity. For a 2-mm cavity, the CW threshold current density is as low as 17 A/cm/sup 2/ for an HR/HR device. An output power as high as 100 mW is obtained for a device with HR/cleaved facets.
| Item Type: | Article |
|---|---|
| Copyright, Publisher and Additional Information: | Copyright © 2005 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. |
| Keywords: | epitaxial growth, quantum dots (QDs), semiconductor diodes, semiconductor lasers |
| Academic Units: | The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield) The University of Sheffield > University of Sheffield Research Centres and Institutes > EPSRC National Centre for III-V Technologies (Sheffield) The University of Sheffield > Faculty of Science (Sheffield) > Department of Physics and Astronomy (Sheffield) |
| ID Code: | 815 |
| Deposited By: | Repository Officer |
| Deposited On: | 02 Dec 2005 |
| Last Modified: | 05 Aug 2007 19:00 |
| Published Version: | http://dx.doi.org/10.1109/LPT.2005.846948 |
| Status: | Published |
| Refereed: | Yes |
| Identification Number: | doi:10.1109/LPT.2005.846948 |
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