Nonparabolicity effects and the spin-split electron dwell time in symmetric III-V double-barrier structures

Isic, G., Milanovic, V., Radovanovic, J., Indjin, D., Ikonic, Z. and Harrison, P. (2009) Nonparabolicity effects and the spin-split electron dwell time in symmetric III-V double-barrier structures. Microelectronics Journal, 40 (3). pp. 611-614. ISSN 0026-2692

Abstract

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Authors/Creators:
  • Isic, G. (elgi@leeds.ac.uk)
  • Milanovic, V.
  • Radovanovic, J.
  • Indjin, D.
  • Ikonic, Z.
  • Harrison, P.
Copyright, Publisher and Additional Information: Copyright © 2008 Elsevier Ltd. This is an author produced version of a paper accepted for publication in 'Microelectronics Journal'. Uploaded in accordance with the publisher's self-archiving policy.
Keywords: quantum wells, dwell time, nonparabolicity, spin-orbit coupling
Institution: The University of Leeds
Academic Units: The University of Leeds > Faculty of Engineering (Leeds) > School of Electronic & Electrical Engineering (Leeds) > Institute of Microwaves and Photonics (Leeds)
Depositing User: Mr Goran Isic
Date Deposited: 04 Mar 2009 17:14
Last Modified: 16 Sep 2016 13:45
Published Version: http://dx.doi.org/10.1016/j.mejo.2008.06.032
Status: Published
Publisher: Elsevier
Refereed: Yes
Identification Number: 10.1016/j.mejo.2008.06.032

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Filename: Isic_WRA-LDSD_paper_whiterose.pdf

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