Isic, G., Milanovic, V., Radovanovic, J., Indjin, D., Ikonic, Z. and Harrison, P. (2009) Nonparabolicity effects and the spin-split electron dwell time in symmetric III-V double-barrier structures. Microelectronics Journal, 40 (3). pp. 611-614. ISSN 0026-2692Full text available as:
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We start from the fourth order nonparabolic and anisotropic conduction band bulk dispersion relation to obtain an one-band effective Hamiltonian which we apply to an AlGaSb symmetric double-barrier structure with resonant energies significantly (more than 200meV) above the well bottom. The spin-splitting is described by the k3 Dresselhaus spin-orbit coupling term modifying only the effective mass of the spin eigenstates in the investigated structure. Apart from the bulk-like resonant energy shift due to the band nonparabolicity, we obtain a substantial shift depending on the choice of boundary conditions for the envelope functions at interfaces between different materials. The shift of resonant energy levels leads to the change of spin-splitting and the magnitude of the dwell times. We attempt to explain the influence of both the nonparabolicity and boundary conditions choice by introducing various effective masses.
|Copyright, Publisher and Additional Information:||Copyright © 2008 Elsevier Ltd. This is an author produced version of a paper accepted for publication in 'Microelectronics Journal'. Uploaded in accordance with the publisher's self-archiving policy.|
|Keywords:||quantum wells, dwell time, nonparabolicity, spin-orbit coupling|
|Academic Units:||The University of Leeds > Faculty of Engineering (Leeds) > School of Electronic & Electrical Engineering (Leeds) > Institute of Microwaves and Photonics (Leeds)|
|Depositing User:||Mr Goran Isic|
|Date Deposited:||04 Mar 2009 17:14|
|Last Modified:||08 Feb 2013 17:06|
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